PART |
Description |
Maker |
IXFR180N06 |
HiPerFETTM Power MOSFETs 180 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80 |
CAP,Polypropylene,60uF,10-% Tol,10 % Tol HiPerFETTM Power MOSFETs MOSFET with FAST Intrinsic Diode Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
IXFK24N10007 IXFX24N100 IXFK24N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFETTM Power MOSFETs
|
IXYS Corporation
|
IXFN27N80 IXFK25N80 |
(IXFx2xN80) HiPerFETTM Power MOSFETs
|
IXYS Corporation
|
IXFT44N50Q3 IXFH44N50Q3 |
HiperFETTM Power MOSFETs Q3-Class
|
http:// IXYS Corporation
|
IXFN34N80 |
HiPerFETTM Power MOSFETs Single DieMOSFET
|
IXYS[IXYS Corporation]
|
IXFR24N100 |
HiPerFETTM Power MOSFETs ISOPLUS247TM(Electrically Isolated Back Surface)
|
IXYS Corporation
|
IXFX120N20 IXFK120N20 |
HiPerFET Power MOSFETs CAP 0.01UF 50V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 120 A, 200 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXFRB24N50Q IXFR24N50Q IXFR26N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
CLA-E27 CLA-E32 CLA-E65 |
CLA-E65
|
Ferroxcube International Holding B.V.
|
IXFH80N10Q IXFT80N10Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?5m惟??娌??澧?己??iPerFET???MOSFET) Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Q-Class
|
IXYS Corporation
|